SSG4407PE -15 a, -30 v, r ds(on) 9 m ? p-channel mode power mosfet elektronische bauelemente 11-oct-2012 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space. fast switching speed. high performance trench technology. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25c i d -15 a t a = 70c -11 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s -2.1 a total power dissipation 1 t a = 25c p d 3.1 w t a = 70c 2.3 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-case (max.) 1 t Q 5 sec r jc 25 c / w thermal resistance junction-ambient (max.) 1 t Q 5 sec r ja 50 c / w notes: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction temperat ure. sop-8 ref. millimeter ref. millimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. d d s s g s d d esd protection diode
SSG4407PE -15 a, -30 v, r ds(on) 9 m ? p-channel mode power mosfet elektronische bauelemente 11-oct-2012 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate threshold voltage v gs(th) -1 - - v v ds =v gs , i d = -250 a gate-body leakage current i gss - - 10 a v ds =0, v gs = 20v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs = 0 - - -5 v ds = -24v, v gs = 0v, t j = 55c on-state drain current 1 i d(on) -50 - - a v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) - - 9 m v gs = -10v, i d = -1a - - 13 v gs = -4.5v, i d = -1a forward transconductance 1 g fs - 44 - s v ds = -5v, i d = -1a diode forward voltage v sd - -0.7 - v i s =1a, v gs = 0v dynamic 2 total gate charge q g - 50 - nc i d = -1a v ds = -15v v gs = -4.5v gate-source charge q gs - 10 - gate-drain charge q gd - 20 - turn-on delay time t d(on) - 10 - ns v dd = -15v i d = -1a v gen = -10v r l = 6 rise time t r - 30 - turn-off delay time t d(off) - 100 - fall time t f - 50 - notes: 1 pulse test pw Q 300 s duty cycle Q 2%. 2 guaranteed by design, not subject to production testing.
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